RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2953EZ3-CE6 1GB
Super Talent F24EA8GS 8GB
Compare
Samsung M4 70T2953EZ3-CE6 1GB vs Super Talent F24EA8GS 8GB
Overall score
Samsung M4 70T2953EZ3-CE6 1GB
Overall score
Super Talent F24EA8GS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
Below the latency in the PassMark tests, ns
73
92
Around 21% lower latency
Faster reading speed, GB/s
3
11.6
Average value in the tests
Reasons to consider
Super Talent F24EA8GS 8GB
Report a bug
Faster write speed, GB/s
9.7
1,423.3
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Super Talent F24EA8GS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
73
92
Read speed, GB/s
3,510.5
11.6
Write speed, GB/s
1,423.3
9.7
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 13 14 15 16 17
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
476
1776
Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
Super Talent F24EA8GS 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CK0 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
Samsung M4 70T2953EZ3-CE6 1GB
Super Talent F24EA8GS 8GB
AMD R538G1601U2S-UO 8GB
Samsung M474A1G43EB1-CRC 8GB
Samsung M3 78T2863QZS-CF7 1GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Kingston 9905471-076.A00LF 8GB
Kingston MSI24D4S7S8MB-8 8GB
Kingston 9905316-106.A02LF 1GB
Kingston KHX2133C15S4/8G 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Kingston KF552C40-16 16GB
Asgard VMA44UG-MEC1U2AW1 8GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMD32GX4M4B3866C18 8GB
Mushkin 991586 2GB
Corsair CMK32GX4M2B3000C15 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M47472K43DB1-CTD 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2133C15-8GVK 8GB
Report a bug
×
Bug description
Source link