Samsung M4 70T2953EZ3-CE6 1GB vs Wilk Elektronik S.A. IR2400D464L17S/8G 8GB

Overall score

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Overall score

Wilk Elektronik S.A. IR2400D464L17S/8G 8GB

Wilk Elektronik S.A. IR2400D464L17S/8G 8GB

Differences Specifications Comments

Differences

Samsung M4 70T2953EZ3-CE6 1GB

Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB

Faster reading speed, GB/s

3 14.9

Average value in the tests

Wilk Elektronik S.A. IR2400D464L17S/8G 8GB

Reasons to consider
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB

Below the latency in the PassMark tests, ns

27 73

Around -170% lower latency
Faster write speed, GB/s

8.4 1,423.3

Average value in the tests
Higher memory bandwidth, mbps

19200 5300

Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M4 70T2953EZ3-CE6 1GB

Wilk Elektronik S.A. IR2400D464L17S/8G 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

73 27
Read speed, GB/s

3,510.5 14.9
Write speed, GB/s

1,423.3 8.4
Memory bandwidth, mbps

5300 19200

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

476 2373

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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