RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
18.8
Average value in the tests
Reasons to consider
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
69
Around -165% lower latency
Faster write speed, GB/s
14.2
1,441.2
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
26
Read speed, GB/s
3,325.1
18.8
Write speed, GB/s
1,441.2
14.2
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
525
3576
Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T5663CZ3-CE6 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-2800C15-16GRKD 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3333C16-16GVK 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9905598-019.A00G 16GB
Kingston 9905471-006.A00LF 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Samsung M471B5273DH0-CK0 4GB
Kingston 9905701-032.A00G 16GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMK16GX4M1C3000C16 16GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Kingston HP32D4U8S8HC-8XR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
EVGA 8GX-D4-3000-MR 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CB8GU2400.C8D 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK16GX4M2C3000C16 8GB
Report a bug
×
Bug description
Source link