RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
35
69
Around -97% lower latency
Faster reading speed, GB/s
9.8
3
Average value in the tests
Faster write speed, GB/s
7.9
1,441.2
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
35
Read speed, GB/s
3,325.1
9.8
Write speed, GB/s
1,441.2
7.9
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
525
2126
Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2K4266C16 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965525-140.A00LF 8GB
JUHOR JHD2666U1916JG 16GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-3200C16-4GRB 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M393A2G40EB1-CPB 16GB
Kingston 9965433-034.A00LF 4GB
Gloway International (HK) STK4U2133D15081C 8GB
Samsung M378B5673FH0-CH9 2GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9905678-105.A00G 8GB
Kingston 9905403-090.A01LF 4GB
Team Group Inc. DDR4 3600 8GB
Samsung M3 78T5663FB3-CF7 2GB
Micron Technology 16G3200CL22 16GB
Mushkin 991988 (996988) 4GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
SK Hynix HMT451U7BFR8C-RD 4GB
G Skill Intl F4-3600C14-16GTRG 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Apacer Technology 78.DAGRL.4050C 16GB
Corsair CMSO4GX3M1C1600C11 4GB
Maxsun MSD48G30Q3 8GB
Report a bug
×
Bug description
Source link