RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
10.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
37
69
Around -86% lower latency
Faster write speed, GB/s
7.8
1,441.2
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
37
Read speed, GB/s
3,325.1
10.4
Write speed, GB/s
1,441.2
7.8
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
525
2213
Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3600C16-16GVKC 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
SK Hynix HYMP512S64CP8-Y5 1GB
Panram International Corporation W4U2666PS-8GC19 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9965669-027.A00G 16GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3000C15-8GTZB 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Gloway International (HK) STKD4GAM2133-F 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMR64GX4M8C3000C15 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology 78.C1GMM.BAC0B 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology M471A1K43CB1-CTD 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2666C18-32GRS 32GB
Kingston KHX2133C11D3/4GX 4GB
Kingston HP37D4U1S8ME-8X 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Report a bug
×
Bug description
Source link