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Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Samsung M4 70T5663CZ3-CE6 2GB vs Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Overall score
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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Differences Specifications Comments

Differences

Samsung M4 70T5663CZ3-CE6 2GB Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 17.5
    Average value in the tests
Patriot Memory (PDP Systems) 3600 C17 Series 4GB Reasons to consider
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 69
    Around -109% lower latency
  • Faster write speed, GB/s
    15.8 left arrow 1,441.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    69 left arrow 33
  • Read speed, GB/s
    3,325.1 left arrow 17.5
  • Write speed, GB/s
    1,441.2 left arrow 15.8
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    525 left arrow 3482

Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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