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Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Samsung M4 70T5663CZ3-CE6 2GB vs Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Overall score
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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Differences Specifications Comments

Differences

Samsung M4 70T5663CZ3-CE6 2GB Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 20.9
    Average value in the tests
Patriot Memory (PDP Systems) 3866 C18 Series 8GB Reasons to consider
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    22 left arrow 69
    Around -214% lower latency
  • Faster write speed, GB/s
    18.5 left arrow 1,441.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    69 left arrow 22
  • Read speed, GB/s
    3,325.1 left arrow 20.9
  • Write speed, GB/s
    1,441.2 left arrow 18.5
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    525 left arrow 4324

Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
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