Samsung M4 70T5663CZ3-CE6 2GB vs Teclast TLD416G26A30 16GB

Overall score

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Overall score

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

Differences Specifications Comments

Differences

Samsung M4 70T5663CZ3-CE6 2GB

Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB

Faster reading speed, GB/s

3 15.9

Average value in the tests

Teclast TLD416G26A30 16GB

Reasons to consider
Teclast TLD416G26A30 16GB

Below the latency in the PassMark tests, ns

36 69

Around -92% lower latency
Faster write speed, GB/s

13.1 1,441.2

Average value in the tests
Higher memory bandwidth, mbps

21300 5300

Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M4 70T5663CZ3-CE6 2GB

Teclast TLD416G26A30 16GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

69 36
Read speed, GB/s

3,325.1 15.9
Write speed, GB/s

1,441.2 13.1
Memory bandwidth, mbps

5300 21300

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

525 2719

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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