RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DHE3MN8-HATP 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Compare
TwinMOS 8DHE3MN8-HATP 2GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Overall score
TwinMOS 8DHE3MN8-HATP 2GB
Overall score
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
Faster reading speed, GB/s
3
18.1
Average value in the tests
Faster write speed, GB/s
870.4
15.6
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
87
Around -211% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
87
28
Read speed, GB/s
3,155.6
18.1
Write speed, GB/s
870.4
15.6
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
417
3693
TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173DB0-YK0 4GB
Kingston KHX2133C14D4/4G 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-3200C16-4GRB 4GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMT64GX4M8C3200C16 8GB
Kingston KHX318C10FR/8G 8GB
Kingston 9905622-075.A00G 8GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3600C14-16GVKA 16GB
Kingston 99U5471-012.A00LF 4GB
Samsung M471A1G44BB0-CWE 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Samsung M471B5273DH0-CK0 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Apacer Technology 78.C1GMW.AZC0B 8GB
SK Hynix HMA81GU6CJR8N-XN 8GB
Corsair CMK8GX4M1E3200C16 8GB
Kingston HP37D4U1S8ME-8XR 8GB
Kingston HP37D4U1S8ME-8XR 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Mushkin 99[2/7/4]199[F/T] 8GB
Kingston 9905403-061.A00LF 2GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Report a bug
×
Bug description
Source link