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Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB

Samsung M471A1G44AB0-CWE 8GB vs G Skill Intl F4-3200C16-8GTZSW 8GB

Overall score
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Overall score
star star star star star
G Skill Intl F4-3200C16-8GTZSW 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB

Differences Specifications Comments

Differences

Samsung M471A1G44AB0-CWE 8GB Reasons to consider
Samsung M471A1G44AB0-CWE 8GB
Report a bug
  • Higher memory bandwidth, mbps
    25600 left arrow 17000
    Around 1.51% higher bandwidth
G Skill Intl F4-3200C16-8GTZSW 8GB Reasons to consider
G Skill Intl F4-3200C16-8GTZSW 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 50
    Around -92% lower latency
  • Faster reading speed, GB/s
    19.4 left arrow 15.3
    Average value in the tests
  • Faster write speed, GB/s
    15.3 left arrow 10.9
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    50 left arrow 26
  • Read speed, GB/s
    15.3 left arrow 19.4
  • Write speed, GB/s
    10.9 left arrow 15.3
  • Memory bandwidth, mbps
    25600 left arrow 17000
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2512 left arrow 3648

Samsung M471A1G44AB0-CWE 8GB RAM comparisons

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3200C16-8GTZSW 8GB RAM comparisons

Samsung M3 78T3354BZ0-CCC 256MB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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