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Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT102464BF160B-16F 8GB

Samsung M471A1K43DB1-CWE 8GB vs Crucial Technology CT102464BF160B-16F 8GB

Overall score
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Overall score
star star star star star
Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Differences Specifications Comments

Differences

Samsung M471A1K43DB1-CWE 8GB Reasons to consider
Samsung M471A1K43DB1-CWE 8GB
Report a bug
  • Faster reading speed, GB/s
    16.1 left arrow 12.8
    Average value in the tests
  • Faster write speed, GB/s
    13.0 left arrow 9.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2% higher bandwidth
Crucial Technology CT102464BF160B-16F 8GB Reasons to consider
Crucial Technology CT102464BF160B-16F 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 33
    Around -14% lower latency

Specifications

Complete list of technical specifications
Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT102464BF160B-16F 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    33 left arrow 29
  • Read speed, GB/s
    16.1 left arrow 12.8
  • Write speed, GB/s
    13.0 left arrow 9.4
  • Memory bandwidth, mbps
    25600 left arrow 12800
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2987 left arrow 2282

Samsung M471A1K43DB1-CWE 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT102464BF160B-16F 8GB RAM comparisons

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RAM Latency Calculator
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