RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Hyundai Inc GP-GR26C16S8K1HU408 8GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
75
Around 49% lower latency
Faster reading speed, GB/s
15.5
14.3
Average value in the tests
Faster write speed, GB/s
12.0
6.3
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
75
Read speed, GB/s
15.5
14.3
Write speed, GB/s
12.0
6.3
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2283
1548
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73DB0-YK0 8GB
Kingston HP37D4U1S8ME-16XR 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
Samsung M471B1G73QH0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-2400C15-4GRB 4GB
SK Hynix HYMP112U64CP8-Y5 1GB
Corsair CM4S16GL3200K18K2 16GB
Samsung M378B5773DH0-CH9 2GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Samsung M378A1K43EB2-CWE 8GB
Kingston KHX3200C20S4/32GX 32GB
AMD AE34G2139U2 4GB
G Skill Intl F4-3400C16-16GTZ 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3600C14-16GVKA 16GB
Corsair CMY16GX3M4A2133C8 4GB
Kingston 9905700-047.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CM4X16GE2666C16K2 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Report a bug
×
Bug description
Source link