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Samsung M471A5244CB0-CWE 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Micron Technology 4ATF51264HZ-2G6E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
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Faster reading speed, GB/s
15.5
14.2
Average value in the tests
Faster write speed, GB/s
12.0
10.3
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
38
Read speed, GB/s
15.5
14.2
Write speed, GB/s
12.0
10.3
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2283
2148
Samsung M471A5244CB0-CWE 4GB RAM comparisons
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Micron Technology 4ATF51264HZ-2G6E1 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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