Samsung M471A5244CB0-CWE 4GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更快的读取速度，GB/s

15.5 14.2

测试中的平均数值
更快的写入速度，GB/s

12.0 10.3

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Micron Technology 4ATF51264HZ-2G6E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E1 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 38
读取速度，GB/s

15.5 14.2
写入速度，GB/s

12.0 10.3
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2283 2148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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