Crucial Technology CT25664BA160B.C16F 2GB vs Kingston SMD4-S8G48HJ-26V 8GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Kingston SMD4-S8G48HJ-26V 8GB

Kingston SMD4-S8G48HJ-26V 8GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 97

左右 70% 更低的延时
更快的写入速度，GB/s

10.1 8.2

测试中的平均数值

Kingston SMD4-S8G48HJ-26V 8GB

需要考虑的原因
Kingston SMD4-S8G48HJ-26V 8GB

报告一个错误

更快的读取速度，GB/s

15.2 14.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Kingston SMD4-S8G48HJ-26V 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 97
读取速度，GB/s

14.3 15.2
写入速度，GB/s

10.1 8.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2227 1632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Wilk Elektronik S.A. W-HK26S16G 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

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AMD AE34G1601U1 4GB

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Crucial Technology CT16G4SFS832A.M8FB 16GB

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Kingston ACR16D3LS1KNG/4G 4GB

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UMAX Technology D4-2666-8GB-1024X8-L 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CMSX64GX4M4A2666C18 16GB

Corsair CMSX64GX4M4A2666C18 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-4000C18-16GVK 16GB

G Skill Intl F4-4000C18-16GVK 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

SK Hynix HMA41GU6MFR8N-TF 8GB

SK Hynix HMA41GU6MFR8N-TF 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston 9905702-184.A00G 8GB

Kingston 9905702-184.A00G 8GB