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Samsung M471A5244CB0-CWE 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
56
Around 32% lower latency
Faster write speed, GB/s
12.0
10.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Report a bug
Faster reading speed, GB/s
20.1
15.5
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
56
Read speed, GB/s
15.5
20.1
Write speed, GB/s
12.0
10.5
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2283
2455
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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