RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C18-16GRS 16GB
Compare
Samsung M471B1G73QH0-YK0 8GB vs G Skill Intl F4-3200C18-16GRS 16GB
Overall score
Samsung M471B1G73QH0-YK0 8GB
Overall score
G Skill Intl F4-3200C18-16GRS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73QH0-YK0 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C18-16GRS 16GB
Report a bug
Below the latency in the PassMark tests, ns
40
47
Around -18% lower latency
Faster reading speed, GB/s
16
11.8
Average value in the tests
Faster write speed, GB/s
14.0
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C18-16GRS 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
47
40
Read speed, GB/s
11.8
16.0
Write speed, GB/s
8.0
14.0
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2061
2965
Samsung M471B1G73QH0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB
G Skill Intl F4-3200C18-16GRS 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C18-16GRS 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
G Skill Intl F4-3000C15-8GRRB 8GB
Kingston 9965662-016.A00G 16GB
Samsung M378A1G43EB1-CRC 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
AMD R538G1601U2S-UO 8GB
Crucial Technology BL8G32C16U4WL.M8FE 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) PSD48G24002 8GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-4266C19-8GTZA 8GB
AMD R538G1601U2S 8GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M471A1K43CB1-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-4600C19-8GTZSWC 8GB
AMD AE34G1601U1 4GB
Apacer Technology 78.CAGMR.40C0B 8GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Report a bug
×
Bug description
Source link