Samsung M471B5173DB0-YK0 4GB vs Micron Technology 4ATF51264HZ-2G3E1 4GB

Overall score

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Overall score

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Differences Specifications Comments

Differences

Samsung M471B5173DB0-YK0 4GB

Reasons to consider
Samsung M471B5173DB0-YK0 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Reasons to consider
Micron Technology 4ATF51264HZ-2G3E1 4GB

Below the latency in the PassMark tests, ns

27 45

Around -67% lower latency
Faster reading speed, GB/s

14.8 12

Average value in the tests
Faster write speed, GB/s

10.2 7.8

Average value in the tests
Higher memory bandwidth, mbps

19200 12800

Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M471B5173DB0-YK0 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

45 27
Read speed, GB/s

12.0 14.8
Write speed, GB/s

7.8 10.2
Memory bandwidth, mbps

12800 19200

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

1939 2173

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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