RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173EB0-YK0 4GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Compare
Samsung M471B5173EB0-YK0 4GB vs Kingmax Semiconductor GSLG42F-18---------- 8GB
Overall score
Samsung M471B5173EB0-YK0 4GB
Overall score
Kingmax Semiconductor GSLG42F-18---------- 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173EB0-YK0 4GB
Report a bug
Below the latency in the PassMark tests, ns
44
99
Around 56% lower latency
Faster write speed, GB/s
8.2
6.9
Average value in the tests
Reasons to consider
Kingmax Semiconductor GSLG42F-18---------- 8GB
Report a bug
Faster reading speed, GB/s
14.2
13
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173EB0-YK0 4GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
99
Read speed, GB/s
13.0
14.2
Write speed, GB/s
8.2
6.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2069
1499
Samsung M471B5173EB0-YK0 4GB RAM comparisons
SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingmax Semiconductor GSLG42F-18---------- 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173EB0-YK0 4GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Samsung M471B5273CH0-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C15-8GRK 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Samsung M471B5273DH0-CH9 4GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4B8G1J3000K16W4 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9905599-026.A00G 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9905630-051.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX3200C20S4/16GX 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-3300C16-16GTZSW 16GB
Kingston 99P5471-002.A00LF 2GB
Apacer Technology GD2.1831WS.001 16GB
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
Report a bug
×
Bug description
Source link