RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Crucial Technology BL8G32C16S4B.8FE 8GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Crucial Technology BL8G32C16S4B.8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
Crucial Technology BL8G32C16S4B.8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
41
45
Around -10% lower latency
Faster reading speed, GB/s
16.1
12.3
Average value in the tests
Faster write speed, GB/s
13.2
8.0
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
41
Read speed, GB/s
12.3
16.1
Write speed, GB/s
8.0
13.2
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1992
2870
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Crucial Technology BL8G32C16S4B.8FE 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT8G4DFS824A.M8FE 8GB
Samsung M378B5273CH0-CH9 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
PNY Electronics PNY 2GB
G Skill Intl F4-2666C19-8GSXK 8GB
Corsair VS2GB1333D4 2GB
Corsair CMK64GX4M8Z2933C16 8GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMD32GX4M4B3866C18 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK16GX4M2Z3466C16 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
Samsung M393B1G70BH0-CK0 8GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston 9905678-028.A00G 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
V-GEN D4H4GL30A8TS5 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Report a bug
×
Bug description
Source link