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Samsung M471B5173QH0-YK0 4GB
SK Hynix HMA451R7AFR8N-TF 4GB

Samsung M471B5173QH0-YK0 4GB vs SK Hynix HMA451R7AFR8N-TF 4GB

Overall score
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Overall score
star star star star star
SK Hynix HMA451R7AFR8N-TF 4GB

SK Hynix HMA451R7AFR8N-TF 4GB

Differences Specifications Comments

Differences

Samsung M471B5173QH0-YK0 4GB Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    45 left arrow 59
    Around 24% lower latency
  • Faster reading speed, GB/s
    12.3 left arrow 9
    Average value in the tests
  • Faster write speed, GB/s
    8.0 left arrow 7.6
    Average value in the tests
SK Hynix HMA451R7AFR8N-TF 4GB Reasons to consider
SK Hynix HMA451R7AFR8N-TF 4GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    45 left arrow 59
  • Read speed, GB/s
    12.3 left arrow 9.0
  • Write speed, GB/s
    8.0 left arrow 7.6
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1992 left arrow 2128

Samsung M471B5173QH0-YK0 4GB RAM comparisons

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

SK Hynix HMA451R7AFR8N-TF 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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