RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BL16G32C16U4BL.16FE 16GB
Compare
Samsung M471B5273CH0-CH9 4GB vs Crucial Technology BL16G32C16U4BL.16FE 16GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
Crucial Technology BL16G32C16U4BL.16FE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Crucial Technology BL16G32C16U4BL.16FE 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
48
Around -60% lower latency
Faster reading speed, GB/s
14.9
8.9
Average value in the tests
Faster write speed, GB/s
14.2
5.9
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BL16G32C16U4BL.16FE 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
48
30
Read speed, GB/s
8.9
14.9
Write speed, GB/s
5.9
14.2
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1420
3332
Samsung M471B5273CH0-CH9 4GB RAM comparisons
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Crucial Technology BL16G32C16U4BL.16FE 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273DH0-CK0 4GB
Kingston 9905713-001.A00G 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3000C16-16GTZR 16GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Samsung M3 93T5750CZA-CE6 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905665-021.A00G 4GB
Kingston 9905584-016.A00LF 4GB
Apacer Technology 78.CAGP7.AFW0C 8GB
PUSKILL DDR3 1600 8G 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMT64GX4M4C3200C16 16GB
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Report a bug
×
Bug description
Source link