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Samsung M471B5273DH0-CH9 4GB
Micron Technology AFSD416ES1P 16GB
Compare
Samsung M471B5273DH0-CH9 4GB vs Micron Technology AFSD416ES1P 16GB
Overall score
Samsung M471B5273DH0-CH9 4GB
Overall score
Micron Technology AFSD416ES1P 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273DH0-CH9 4GB
Report a bug
Reasons to consider
Micron Technology AFSD416ES1P 16GB
Report a bug
Below the latency in the PassMark tests, ns
25
47
Around -88% lower latency
Faster reading speed, GB/s
14.5
9.3
Average value in the tests
Faster write speed, GB/s
10.7
5.9
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273DH0-CH9 4GB
Micron Technology AFSD416ES1P 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
47
25
Read speed, GB/s
9.3
14.5
Write speed, GB/s
5.9
10.7
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1413
2620
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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