RAM comparison Samsung M471B5273EB0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Samsung M471B5273EB0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Overall score

Samsung M471B5273EB0-CK0 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M471B5273EB0-CK0 4GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Below the latency in the PassMark tests, ns

29 40

Around -38% lower latency
Faster write speed, GB/s

9.6 8.9

Average value in the tests
Higher memory bandwidth, mbps

17000 12800

Around 1.33 higher bandwidth

Complete list of technical specifications

Samsung M471B5273EB0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

1789 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns