Samsung M471B5273EB0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

更快的读取速度，GB/s

12.3 12.2

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时
更快的写入速度，GB/s

9.6 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 29
读取速度，GB/s

12.3 12.2
写入速度，GB/s

8.9 9.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Avant Technology W641GU42J7240NC 8GB

Avant Technology W641GU42J7240NC 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMSX64GX4M2A3200C22 32GB

Corsair CMSX64GX4M2A3200C22 32GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Apacer Technology 78.CAGP7.DFW0C 8GB

Apacer Technology 78.CAGP7.DFW0C 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMD128GX4M8A2400C14 16GB

Corsair CMD128GX4M8A2400C14 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-3800C14-16GTZN 16GB

G Skill Intl F4-3800C14-16GTZN 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Apacer Technology 78.C1GQB.4032B 8GB

Apacer Technology 78.C1GQB.4032B 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Apacer Technology 78.BAGP4.AR50C 4GB

Apacer Technology 78.BAGP4.AR50C 4GB