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Samsung M471B5673FH0-CF8 2GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB

Samsung M471B5673FH0-CF8 2GB vs InnoDisk Corporation M4S0-8GSSOCIK 8GB

Overall score
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Overall score
star star star star star
InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

Differences Specifications Comments

Differences

Samsung M471B5673FH0-CF8 2GB Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
InnoDisk Corporation M4S0-8GSSOCIK 8GB Reasons to consider
InnoDisk Corporation M4S0-8GSSOCIK 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    24 left arrow 30
    Around -25% lower latency
  • Faster reading speed, GB/s
    15.9 left arrow 10.6
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 6.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 8500
    Around 2.51 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    30 left arrow 24
  • Read speed, GB/s
    10.6 left arrow 15.9
  • Write speed, GB/s
    6.8 left arrow 8.7
  • Memory bandwidth, mbps
    8500 left arrow 21300
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    1479 left arrow 2326

Samsung M471B5673FH0-CF8 2GB RAM comparisons

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB RAM comparisons

SpecTek Incorporated ?????????????????? 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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