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Samsung M471B5673FH0-CF8 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB

Samsung M471B5673FH0-CF8 2GB vs Micron Technology CT4G4DFS8213.8FA11 4GB

Overall score
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Overall score
star star star star star
Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Differences Specifications Comments

Differences

Samsung M471B5673FH0-CF8 2GB Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 35
    Around 14% lower latency
Micron Technology CT4G4DFS8213.8FA11 4GB Reasons to consider
Micron Technology CT4G4DFS8213.8FA11 4GB
Report a bug
  • Faster reading speed, GB/s
    15 left arrow 10.6
    Average value in the tests
  • Faster write speed, GB/s
    12.0 left arrow 6.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 8500
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    30 left arrow 35
  • Read speed, GB/s
    10.6 left arrow 15.0
  • Write speed, GB/s
    6.8 left arrow 12.0
  • Memory bandwidth, mbps
    8500 left arrow 17000
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1479 left arrow 2654

Samsung M471B5673FH0-CF8 2GB RAM comparisons

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Micron Technology CT4G4DFS8213.8FA11 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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