RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA81GU6CJR8N-XN 8GB
Compare
Samsung M471B5673FH0-CF8 2GB vs SK Hynix HMA81GU6CJR8N-XN 8GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
SK Hynix HMA81GU6CJR8N-XN 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
31
Around 3% lower latency
Reasons to consider
SK Hynix HMA81GU6CJR8N-XN 8GB
Report a bug
Faster reading speed, GB/s
16.4
10.6
Average value in the tests
Faster write speed, GB/s
12.6
6.8
Average value in the tests
Higher memory bandwidth, mbps
25600
8500
Around 3.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA81GU6CJR8N-XN 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
31
Read speed, GB/s
10.6
16.4
Write speed, GB/s
6.8
12.6
Memory bandwidth, mbps
8500
25600
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1066 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1479
3046
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
SK Hynix HMA81GU6CJR8N-XN 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA81GU6CJR8N-XN 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
G Skill Intl F3-1600C11-4GIS 4GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Transcend Information TS512MLH64V4H 4GB
Samsung M393B5170FH0-CK0 4GB
Gloway International (HK) STK4U2400D15082C 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C15-16GVR 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMV16GX4M1A2133C15 16GB
Samsung M393B5270CH0-CH9 4GB
Kingston MSI24D4S7D8MHMH6 16GB
Samsung M3 78T2863QZS-CF7 1GB
V-GEN D4S8GL30A8TS5 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CM4X4GF2400C16S2 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5643-001.A00G 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Samsung M393B2G70BH0-CH9 16GB
Avant Technology J642GU42J9266N2 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Report a bug
×
Bug description
Source link