RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5674QH0-YK0 2GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Compare
Samsung M471B5674QH0-YK0 2GB vs A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Overall score
Samsung M471B5674QH0-YK0 2GB
Overall score
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5674QH0-YK0 2GB
Report a bug
Reasons to consider
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
38
Around -31% lower latency
Faster reading speed, GB/s
17.5
7.2
Average value in the tests
Faster write speed, GB/s
12.8
3.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5674QH0-YK0 2GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
38
29
Read speed, GB/s
7.2
17.5
Write speed, GB/s
3.0
12.8
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
915
3086
Samsung M471B5674QH0-YK0 2GB RAM comparisons
Samsung M471B5773DH0-YK0 2GB
Micron Technology 4KTF25664HZ-1G6E1 2GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5674QH0-YK0 2GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-2400C15-8GVS 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
AMD R538G1601U2S 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMR32GX4M4A2666C16 8GB
Samsung M393B1G70BH0-CK0 8GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMD64GX4M8A2800C16 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Kingston HP698651-154-MCN 8GB
Corsair CMD16GX4M2A2400C14 8GB
Kingston 99U5471-012.A00LF 4GB
SK Hynix HMA82GU6AFR8N-UH 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9905711-002.A00G 4GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
Corsair VSA2GSDS667C4 2GB
Corsair CMT32GX4M4C3200C14 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston X2YH1K-MIE-NX 16GB
Report a bug
×
Bug description
Source link