SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Overall score
star star star star star
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Differences

  • Faster write speed, GB/s
    13.6 left arrow 7.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 19200
    Around 1.11% higher bandwidth
  • Below the latency in the PassMark tests, ns
    25 left arrow 46
    Around -84% lower latency

Specifications

Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 25
  • Read speed, GB/s
    14.2 left arrow 14.2
  • Write speed, GB/s
    13.6 left arrow 7.4
  • Memory bandwidth, mbps
    21300 left arrow 19200
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2717 left arrow 2104
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons