RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Compare
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Report a bug
Faster write speed, GB/s
13.6
10.2
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
46
Around -70% lower latency
Faster reading speed, GB/s
15.2
14.2
Average value in the tests
Specifications
Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
46
27
Read speed, GB/s
14.2
15.2
Write speed, GB/s
13.6
10.2
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2717
2764
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB RAM comparisons
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KF560C40-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-CH9 8GB
Hewlett-Packard 7EH64AA# 8GB
Crucial Technology CT102464BA160B.M16 8GB
DSL Memory D4SH1G081SH26A-C 8GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA84GL7MMR4N-TF 32GB
Samsung M393B2G70BH0-CK0 16GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
Samsung M391B5673EH1-CH9 2GB
Heoriady M378A1K43BB2-CTD 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston KTP9W1-MIE 16GB
PNY Electronics PNY 2GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Kingston 99U5471-012.A00LF 4GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Samsung M471B5273DH0-CK0 4GB
Asgard VMA41UG-MEC1U2AW1 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMK16GX4M2Z4000C18 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3000C15-8GTZR 8GB
Report a bug
×
Bug description
Source link