RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Compare
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Micron Technology 8ATF1G64HZ-3G2J1 8GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Report a bug
Faster write speed, GB/s
13.6
11.9
Average value in the tests
Reasons to consider
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
46
Around -35% lower latency
Faster reading speed, GB/s
15.6
14.2
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2 higher bandwidth
Specifications
Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
46
34
Read speed, GB/s
14.2
15.6
Write speed, GB/s
13.6
11.9
Memory bandwidth, mbps
21300
25600
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2717
2812
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
PUSKILL DDR3 1600 8G 8GB
V-Color Technology Inc. TD416G26D819-VC 16GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C14-16GTZRA 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9905700-053.A00G 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3600C17-16GTZSW 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Kingston ACR16D3LU1KNG/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
PNY Electronics PNY 2GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston KCRXJ6-MIE 16GB
ASint Technology SSA302G08-EGN1C 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Corsair VS2GB1333D4 2GB
G Skill Intl F4-2400C15Z8GNT 8GB
Report a bug
×
Bug description
Source link