RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Compare
ASint Technology SSA302G08-EGN1C 4GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Overall score
ASint Technology SSA302G08-EGN1C 4GB
Overall score
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
37
Around 30% lower latency
Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
Faster reading speed, GB/s
21.4
12.6
Average value in the tests
Faster write speed, GB/s
14.3
9.5
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
37
Read speed, GB/s
12.6
21.4
Write speed, GB/s
9.5
14.3
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2174
3448
ASint Technology SSA302G08-EGN1C 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM comparisons
Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-2400C17-4GIS 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Apacer Technology GD2.1527CS.001 8GB
ASint Technology SSA302G08-EGN1C 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Samsung M393B1G70QH0-YK0 8GB
Kingston 9965596-002.B00G 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMT32GX4M4C3466C16 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3333C16-16GTZ 16GB
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited KD4AGU880-36A180C 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston 9905744-011.A00G 32GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology ILG8GS2400A 8GB
Corsair CMY8GX3M2A2666C10 4GB
SK Hynix HMA82GR7JJR8N-VK 16GB
Kingston 99U5474-028.A00LF 4GB
Corsair CM4X16GE2400C16K4 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMW64GX4M4C3200C16 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KHX3000C16/16GX 16GB
Report a bug
×
Bug description
Source link