ASint Technology SSA302G08-EGN1C 4GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 30% 更低的延时

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

需要考虑的原因
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

报告一个错误

更快的读取速度，GB/s

21.4 12.6

测试中的平均数值
更快的写入速度，GB/s

14.3 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 37
读取速度，GB/s

12.6 21.4
写入速度，GB/s

9.5 14.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2174 3448

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M386A8K40BMB-CPB 64GB

Samsung M386A8K40BMB-CPB 64GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Apacer Technology 78.C2GFK.AR20B 8GB

Apacer Technology 78.C2GFK.AR20B 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Apacer Technology 78.CAGRN.40C0B 8GB

Apacer Technology 78.CAGRN.40C0B 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Avant Technology J641GU42J5213N0 8GB

Avant Technology J641GU42J5213N0 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston X75V1H-MIE 32GB

Kingston X75V1H-MIE 32GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA82GU7MFR8N-TF 16GB

SK Hynix HMA82GU7MFR8N-TF 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Golden Empire CL16-18-18 D4-3000 16GB

Golden Empire CL16-18-18 D4-3000 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Golden Empire CL16-18-18 D4-2666 8GB

Golden Empire CL16-18-18 D4-2666 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB