RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Compare
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Report a bug
Below the latency in the PassMark tests, ns
46
75
Around 39% lower latency
Faster write speed, GB/s
13.6
7.1
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Report a bug
Faster reading speed, GB/s
14.9
14.2
Average value in the tests
Specifications
Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
46
75
Read speed, GB/s
14.2
14.9
Write speed, GB/s
13.6
7.1
Memory bandwidth, mbps
21300
21300
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2717
1763
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905670-012.A00G 8GB
Kingston 99U5471-056.A00LF 8GB
Neo Forza NMUD480E82-3600 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMK16GX4M4B3200C15 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMW32GX4M4K3733C17 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Kingston 99U5584-001.A00LF 4GB
Corsair CMT64GX4M4C3200C16 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Kingston 9905403-090.A01LF 4GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMSX32GX4M1A2666C18 32GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMD32GX4M4B3333C16 8GB
Kingston 9905403-061.A00LF 2GB
Kingston KMKYF9-MIH 8GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Report a bug
×
Bug description
Source link