RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Crucial Technology CT16G4SFD824A.C16FBR 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
35
Around 37% lower latency
Faster reading speed, GB/s
17.7
14.5
Average value in the tests
Faster write speed, GB/s
12.7
10.6
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Report a bug
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
35
Read speed, GB/s
17.7
14.5
Write speed, GB/s
12.7
10.6
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3075
2664
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM comparisons
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9965600-012.A01G 16GB
Unigen Corporation U51U6411P8DU-BD1 4GB
SK Hynix HMA82GU7AFR8N-UH 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
AMD AE34G1601U1 4GB
Samsung M393A2G40DB1-CRC 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C16-16GTRSC 16GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-3400C16-4GRBD 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9965589-037.D00G 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Samsung M4 70T5663CZ3-CE6 2GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston 9905624-044.A00G 8GB
Samsung 1600 CL10 Series 8GB
Gloway International (HK) STK4U2400D15082C 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Report a bug
×
Bug description
Source link