RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Crucial Technology CT16G4SFS832A.C8FE 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Crucial Technology CT16G4SFS832A.C8FE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
40
Around 45% lower latency
Faster reading speed, GB/s
17.7
17
Average value in the tests
Reasons to consider
Crucial Technology CT16G4SFS832A.C8FE 16GB
Report a bug
Faster write speed, GB/s
13.7
12.7
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2 higher bandwidth
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
40
Read speed, GB/s
17.7
17.0
Write speed, GB/s
12.7
13.7
Memory bandwidth, mbps
21300
25600
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
3075
3180
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM comparisons
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Crucial Technology CT16G4SFS832A.C8FE 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-3200C15-16GTZ 16GB
Kingston 99U5469-045.A00LF 4GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
SK Hynix HMT351S6EFR8A-PB 4GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
Samsung M471B5173QH0-YK0 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2400C17-8GISM 8GB
Kingston 9905403-518.A00LF 8GB
G Skill Intl F4-3400C16-8GSXW 8GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Samsung M4 70T5663CZ3-CE6 2GB
Essencore Limited KD48GU88C-26N190A 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMWX16GC3200C16W2E 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Heoriady HX2666DT8G-TD 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3600C17-8GTZKW 8GB
A-DATA Technology DDR4 2400 16GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M392A4K40BM0-CRC 32GB
Report a bug
×
Bug description
Source link