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SK Hynix DDR2 800 2G 2GB
Samsung M378A1K43EB2-CWE 8GB
Compare
SK Hynix DDR2 800 2G 2GB vs Samsung M378A1K43EB2-CWE 8GB
Overall score
SK Hynix DDR2 800 2G 2GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix DDR2 800 2G 2GB
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Faster reading speed, GB/s
2
17.6
Average value in the tests
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
77
Around -133% lower latency
Faster write speed, GB/s
12.0
1,884.0
Average value in the tests
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix DDR2 800 2G 2GB
Samsung M378A1K43EB2-CWE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
33
Read speed, GB/s
2,936.9
17.6
Write speed, GB/s
1,884.0
12.0
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
564
2910
SK Hynix DDR2 800 2G 2GB RAM comparisons
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Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
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Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Corsair CMK16GX4M1A2400C14 16GB
Corsair CMK8GX4M1A2400C14 8GB
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G Skill Intl F4-2666C19-8GNT 8GB
G Skill Intl F3-2133C9-4GAB 4GB
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Essencore Limited IM48GU88A30-FGGHMZ 8GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
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