STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Inmos + 256MB

Overall score

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Overall score

Inmos + 256MB

Inmos + 256MB

Differences Specifications Comments

Differences

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Faster reading speed, GB/s

3 11.5

Average value in the tests

Inmos + 256MB

Reasons to consider
Inmos + 256MB

Below the latency in the PassMark tests, ns

30 63

Around -110% lower latency
Faster write speed, GB/s

9.1 1,447.3

Average value in the tests
Higher memory bandwidth, mbps

16800 5300

Around 3.17 higher bandwidth

Specifications

Complete list of technical specifications

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Inmos + 256MB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

63 30
Read speed, GB/s

3,231.0 11.5
Write speed, GB/s

1,447.3 9.1
Memory bandwidth, mbps

5300 16800

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed

5-5-5-15 / 667 MHz no data
Ranking PassMark (The more the better)

478 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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