RAM comparison SK Hynix HMT351U6CFR8C-H9 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

SK Hynix HMT351U6CFR8C-H9 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score

SK Hynix HMT351U6CFR8C-H9 4GB

Overall score

Differences Specifications Comments

Reasons to consider
SK Hynix HMT351U6CFR8C-H9 4GB

Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Faster reading speed, GB/s

15.6 13.7

Average value in the tests
Higher memory bandwidth, mbps

21300 10600

Around 2.01 higher bandwidth

Complete list of technical specifications

SK Hynix HMT351U6CFR8C-H9 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2152 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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