RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT425S6CFR6A-PB 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Compare
SK Hynix HMT425S6CFR6A-PB 2GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Overall score
SK Hynix HMT425S6CFR6A-PB 2GB
Overall score
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HMT425S6CFR6A-PB 2GB
Report a bug
Below the latency in the PassMark tests, ns
41
50
Around 18% lower latency
Reasons to consider
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Report a bug
Faster reading speed, GB/s
12.5
10.1
Average value in the tests
Faster write speed, GB/s
7.3
7.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HMT425S6CFR6A-PB 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
41
50
Read speed, GB/s
10.1
12.5
Write speed, GB/s
7.1
7.3
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1484
2326
SK Hynix HMT425S6CFR6A-PB 2GB RAM comparisons
Ramaxel Technology RMT3170MP68F9F1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT425S6CFR6A-PB 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905643-009.A00G 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Kingston KHX1600C9S3L/4G 4GB
Kingston 9905702-135.A00G 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KCRXJ6-MIE 16GB
Samsung M3 78T5663EH3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
G Skill Intl F2-8500CL5-2GBPI 2GB
V-GEN D4H8GL26A8TS6 8GB
PNY Electronics PNY 2GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Kingston 9905471-054.A00LF 8GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Samsung M471A2K43EB1-CTD 16GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Report a bug
×
Bug description
Source link