RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HYMP112U64CP8-S6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Compare
SK Hynix HYMP112U64CP8-S6 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Overall score
SK Hynix HYMP112U64CP8-S6 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HYMP112U64CP8-S6 1GB
Report a bug
Faster reading speed, GB/s
4
11.1
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
59
Around -74% lower latency
Faster write speed, GB/s
9.5
2,076.1
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HYMP112U64CP8-S6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
34
Read speed, GB/s
4,723.5
11.1
Write speed, GB/s
2,076.1
9.5
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
741
2319
SK Hynix HYMP112U64CP8-S6 1GB RAM comparisons
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP164U64CP6-Y5 512MB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB RAM comparisons
Samsung M378A1K43BB1-CPB 8GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-3600C16-32GTZR 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-2400C17-8GISM 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Nanya Technology NT512T64U88B0BY-3C 512MB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
Samsung M393B2G70BH0-CH9 16GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kingston HP32D4S2S1ME-8 8GB
SK Hynix HYMP125S64CP8-S6 2GB
G Skill Intl F4-3000C15-4GVR 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3866C18-4GVK 4GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Apacer Technology 78.01GA0.9K5 1GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
A-DATA Technology AD73I1C1674EV 4GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Report a bug
×
Bug description
Source link