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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A5143EB1-CPB 4GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung M378A5143EB1-CPB 4GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Samsung M378A5143EB1-CPB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Faster reading speed, GB/s
3
14.6
Average value in the tests
Reasons to consider
Samsung M378A5143EB1-CPB 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
63
Around -66% lower latency
Faster write speed, GB/s
10.8
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A5143EB1-CPB 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
38
Read speed, GB/s
3,231.0
14.6
Write speed, GB/s
1,447.3
10.8
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
478
2298
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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