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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Faster reading speed, GB/s
3
20.4
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
18
63
Around -250% lower latency
Faster write speed, GB/s
17.2
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
18
Read speed, GB/s
3,231.0
20.4
Write speed, GB/s
1,447.3
17.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
478
3814
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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