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Swissbit MEU25664D6BC2EP-30 2GB
Samsung M471A5644EB0-CPB 2GB

Swissbit MEU25664D6BC2EP-30 2GB vs Samsung M471A5644EB0-CPB 2GB

Overall score
star star star star star
Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Overall score
star star star star star
Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

Differences Specifications Comments

Differences

Swissbit MEU25664D6BC2EP-30 2GB Reasons to consider
Swissbit MEU25664D6BC2EP-30 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 13.2
    Average value in the tests
Samsung M471A5644EB0-CPB 2GB Reasons to consider
Samsung M471A5644EB0-CPB 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 68
    Around -143% lower latency
  • Faster write speed, GB/s
    9.1 left arrow 1,944.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Swissbit MEU25664D6BC2EP-30 2GB
Samsung M471A5644EB0-CPB 2GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    68 left arrow 28
  • Read speed, GB/s
    3,973.0 left arrow 13.2
  • Write speed, GB/s
    1,944.9 left arrow 9.1
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    673 left arrow 1989

Swissbit MEU25664D6BC2EP-30 2GB RAM comparisons

Kingston KHX1600C9D3/2G 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB

Samsung M471A5644EB0-CPB 2GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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