TwinMOS 8DHE3MN8-HATP 2GB vs Samsung M471A1K43EB1-CWE 8GB

Overall score

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Overall score

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Differences Specifications Comments

Differences

TwinMOS 8DHE3MN8-HATP 2GB

Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB

Faster reading speed, GB/s

3 16

Average value in the tests
Faster write speed, GB/s

870.4 12.4

Average value in the tests

Samsung M471A1K43EB1-CWE 8GB

Reasons to consider
Samsung M471A1K43EB1-CWE 8GB

Below the latency in the PassMark tests, ns

46 87

Around -89% lower latency
Higher memory bandwidth, mbps

25600 5300

Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M471A1K43EB1-CWE 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

87 46
Read speed, GB/s

3,155.6 16.0
Write speed, GB/s

870.4 12.4
Memory bandwidth, mbps

5300 25600

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

417 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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