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TwinMOS 8DPT5MK8-TATP 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

TwinMOS 8DPT5MK8-TATP 2GB vs Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Overall score
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Overall score
star star star star star
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Differences Specifications Comments

Differences

TwinMOS 8DPT5MK8-TATP 2GB Reasons to consider
TwinMOS 8DPT5MK8-TATP 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 18.6
    Average value in the tests
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB Reasons to consider
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    21 left arrow 53
    Around -152% lower latency
  • Faster write speed, GB/s
    14.0 left arrow 1,590.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 8DPT5MK8-TATP 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    53 left arrow 21
  • Read speed, GB/s
    3,726.4 left arrow 18.6
  • Write speed, GB/s
    1,590.1 left arrow 14.0
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    522 left arrow 3356

TwinMOS 8DPT5MK8-TATP 2GB RAM comparisons

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB RAM comparisons

Kingston KF560C40-16 16GB
Samsung M393B5170EH1-CH9 4GB
RAM Latency Calculator
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