RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-4000C19-16GTZR 16GB
Compare
TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-4000C19-16GTZR 16GB
Overall score
TwinMOS 8DPT5MK8-TATP 2GB
Overall score
G Skill Intl F4-4000C19-16GTZR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DPT5MK8-TATP 2GB
Report a bug
Faster reading speed, GB/s
3
18.8
Average value in the tests
Reasons to consider
G Skill Intl F4-4000C19-16GTZR 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
53
Around -104% lower latency
Faster write speed, GB/s
17.9
1,590.1
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-4000C19-16GTZR 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
53
26
Read speed, GB/s
3,726.4
18.8
Write speed, GB/s
1,590.1
17.9
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
522
4053
TwinMOS 8DPT5MK8-TATP 2GB RAM comparisons
Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
G Skill Intl F4-4000C19-16GTZR 16GB RAM comparisons
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMD8GX4M2B3600C18 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Corsair CML8GX3M2A1600C9 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C17-8GVR 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
Samsung M378B5273CH0-CH9 4GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung SF4721G4CKHH6DFSDS 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9965596-016.B01G 8GB
Avant Technology F6451U64F9333G 4GB
Samsung M378A5244CB0-CWE 4GB
Avant Technology F641GU67F9333G 8GB
Essencore Limited KD48GS88C-32N2200 8GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Report a bug
×
Bug description
Source link