RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Compare
TwinMOS 8DPT5MK8-TATP 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Overall score
TwinMOS 8DPT5MK8-TATP 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DPT5MK8-TATP 2GB
Report a bug
Faster reading speed, GB/s
3
10.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
53
Around -51% lower latency
Faster write speed, GB/s
7.4
1,590.1
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
53
35
Read speed, GB/s
3,726.4
10.2
Write speed, GB/s
1,590.1
7.4
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
522
2124
TwinMOS 8DPT5MK8-TATP 2GB RAM comparisons
Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905744-023.A00G 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
Kingston KHX2133C11D3/4GX 4GB
Transcend Information JM3200HLB-16GK 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMW32GX4M4K4000C19 8GB
Kingston 99P5474-014.A00LF 4GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
G Skill Intl F4-3600C18-16GVK 16GB
G Skill Intl F4-3200C18-16GRS 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston XJ69DF-HYA 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Asgard VMA45UG-MIC1U22T2 8GB
Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Panram International Corporation PUD42400C154GNJW 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston KHX2666C16/8G 8GB
Samsung M471B5173DB0-YK0 4GB
Samsung M378A1K43EB2-CWE 8GB
Report a bug
×
Bug description
Source link