RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Compare
TwinMOS 8DPT5MK8-TATP 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Overall score
TwinMOS 8DPT5MK8-TATP 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DPT5MK8-TATP 2GB
Report a bug
Faster reading speed, GB/s
3
13.5
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
53
Around -83% lower latency
Faster write speed, GB/s
10.2
1,590.1
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
53
29
Read speed, GB/s
3,726.4
13.5
Write speed, GB/s
1,590.1
10.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
522
2088
TwinMOS 8DPT5MK8-TATP 2GB RAM comparisons
Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB RAM comparisons
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M471A2K43EB1-CWE 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Corsair CMZ16GX3M2A2400C10 8GB
Kingston KHX2133C13S4/8G 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston HP26D4U9S1ME-4 4GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-2666C18-8GFX 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston HX426C16FB2/8-SP 8GB
Kingston 99U5474-010.A00LF 2GB
Samsung M471A2K43CB1-CRCR 16GB
Kingston KHX2133C11D3/4GX 4GB
Kingston KKN2NM-MIE 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3600C16-32GTZN 32GB
Kingston 9905471-006.A00LF 4GB
G Skill Intl F4-2400C15-8GRK 8GB
Kingston 99U5584-005.A00LF 4GB
A-DATA Technology AX4S2800316G18-B 16GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
SK Hynix HYMP125S64CP8-S6 2GB
Samsung M471A1G44AB0-CWE 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston KVR24N17S8/4 4GB
Report a bug
×
Bug description
Source link